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標題: [硬件] Intel demos 3D transistor [打印本頁]

作者: qcmadness    時間: 2011-5-5 01:07     標題: Intel demos 3D transistor

An important technology advancement
作者: ccw    時間: 2011-5-5 10:02

引用:
原帖由 qcmadness 於 2011-5-5 01:07 發表
An important technology advancement
It looks I have missed something extraordinary, thanks for telling
作者: qcmadness    時間: 2011-5-10 07:46

http://www.realworldtech.com/page.cfm?ArticleID=RWT050511195446
引用:
In practical terms, Intel’s 22nm tri-gate transistors are a significant advantage for the company. Moving to a smaller node typically improves performance by around 10-15%. For operating voltages near 0.85V, Intel is essentially improving performance by an entire extra process generation, and more at 0.7V. Even taking Intel’s estimates conservatively, that suggests a performance/watt advantage of 10-20% for power optimized chips versus a planar 22nm process.

The other leaders in semiconductor manufacturing all indicated they will continue to scale conventional transistors for the next generation. TSMC and Global Foundries both announced FinFETs for the 14nm node. The foundries must move slower because FinFETs require changes in circuit design (especially analog), tools and IP throughout the whole ecosystem. External partners may be unprepared for the transition, but are necessary for the foundries. Intel (or IBM) can shift their design infrastructure much faster, since it is almost entirely internal and they do not rely on an extensive partner network.





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