If there's one silver lining for Intel's competitors, it's that Mr. Bohr essentially admitted that yields weren't currently at production levels, though he insists that his company "is always surprised by how much yields improve at the last second."
In other words the first 3D transistor product from Intel (the 22 nm Ivy Bridge core) hasn't quite shipped yet. But if Intel can deliver, it's competitors may be in as deep trouble as the veteran chipmaker claims.
The single biggest cause of variation is random dopant fluctuation (RDF), where the dopant atoms that are implanted in the transistor channel are unevenly distributed. Once this was not an issue, however the size of transistors and the number of dopant atoms small enough that the density can fluctuate significantly.
Other contributors to variation are systematic, rather than random, and determined by the context of a transistor. Transistors can impact the performance of their neighbors, so a single transistor cannot be considered in isolation and depends on the context. For instance, strained silicon improves transistor performance, the strain is impacted by nearby layout structures.
原帖由 qcmadness 於 2011-9-15 04:01 發表
其實而家單轉製程本身已經無乜得益
因為而家leakage又大, variation又高
e.g. 22nm
http://www.realworldtech.com/page.cfm?ArticleID=RWT031411013528
以前Intel / AMD果d咩strained silicon呀, high-K metal ga ...
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