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http://www.anandtech.com/show/49 ... 12mb-lpddr2-mdm6600
http://www.ifixit.com/Teardown/iPhone-4S-Teardown/6610/1

引用:

The folks over at iFixit are hard at work dissecting the newly announced/soon-to-be-available iPhone 4S. We've already gone over performance expectations as well as provided a high level hardware analysis, but with a tour inside the smartphone we're able to confirm a few suspicions. First is the Qualcomm MDM6610 baseband, a slightly different part from the MDM6600 that we had theorized earlier. There isn't a whole lot of documentation out on the 6610 but we're digging.

The second confirmation iFixit's teardown gives us is the size of the A5's on-package memory: 512MB. A quick look at the image above yields the Samsung part number: K3PE4E400B-XGC1. Each highlighted E4 refers to a separate 2Gb LPDDR2 die. The A5 features a dual-channel LPDDR2 memory interface, thus requiring two 32-bit die to fully populate both channels. The final two characters in the part number (C1) refer to the DRAM's clock period, in this case 2.5ns which indicates a 400MHz clock frequency (F=1/T). My assumption here is Samsung's part number is actually referring to clock frequency and not data rate, implying there are a pair of LPDDR2-800 die in the PoP stack. It's not entirely uncommon to run memory at speeds lower than they are rated for, a practice we've seen in graphics memory in particular for as long as I can remember, so I wouldn't take this as proof that Apple is running at full LPDDR2-800 speeds.

MDM6610咩來